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| FDFS2P103A August 2002 FDFS2P103A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description The FDFS2P103A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features * -5.3 A, -30V RDS(ON) = 59 m @ VGS = -10 V RDS(ON) = 92 m @ VGS = -4.5 V * VF < 0.35 V @ 1 A (TJ = 125C) VF < 0.25 V @ 1 A (TJ = 25C) * Schottky and MOSFET incorporated into single power surface mount SO-8 package * Electrically independent Schottky and MOSFET pinout for design flexibility D D C C A1 A2 G S A 8C 7C 6D 5D S3 G4 SO-8 Pin 1 A TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter (Note 1a) Ratings -30 25 -5.3 -20 2 1.6 1 0.9 Units V V A W Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG VRRM IO Operating and Storage Junction Temperature Range Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current (Note 1a) -55 to +150 30 1 C V A Package Marking and Ordering Information Device Marking FDFS2P103A Device FDFS2P103A Reel Size 13'' Tape width 12mm Quantity 2500 units 2002 Fairchild Semiconductor Corporation FDFS2P103A Rev C (W) FDFS2P103A Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions ID = -250 A VGS = 0 V, ID = -250 A, Referenced to 25C VDS = -24 V, VGS = 0 V VGS = 25 V, VDS = 0 V Min -30 Typ Max Units V Off Characteristics -22 -1 100 mV/C A nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance ID = -250 A VDS = VGS, ID = -250 A, Referenced to 25C VGS = -10 V, ID = -5.3 A VGS = -4.5 V, ID = -4 A VGS=-10 V, ID = -5.3A, TJ=125C VDS = -5V, ID = -5.3 A -1 -1.8 4.2 50 76 68 8.9 -3 V mV/C 59 92 88 m gFS S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = -15 V, f = 1.0 MHz V GS = 0 V, VGS = 0 V, 535 135 75 4.7 pF pF pF f = 1.0 MHz Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -15 V, VGS = -10 V, ID = -1 A, RGEN = 6 11 16 15 10 5.7 1.8 2.4 21 28 26 19 8 ns ns ns ns nC nC nC VDS = -15 V, VGS = -5 V ID = -5.3 A, Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = -1.3 A Voltage Reverse Leakage VR = 30 V IF = 0.1A VF Forward Voltage IF = 1A IF = 3A TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C (Note 2) -0.8 -1.3 -1.2 A V Schottky Diode Characteristics IR 160 225 80 305 185 380 500 280 250 350 250 420 A mV mV mV mV mV FDFS2P103A Rev C (W) FDFS2P103A Thermal Characteristics RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 78 135 40 C/W C/W C/W Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDFS2P103A Rev C (W) FDFS2P103A Typical Characteristics 20 -ID, DRAIN-SOURCE CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V 16 -6.0V 12 -4.0V -5.0V -4.5V 5.00 VGS = -3.0V 4.00 3.00 -3.5V 8 -3.5V 2.00 -4.0V -4.5V -5.0V -6.0V -10V 4 -3.0V 0 0 1 2 3 4 5 -VDS, DRAIN-SOURCE VOLTAGE (V) 1.00 0.00 0 4 8 - ID, DRAIN CURRENT (A) 12 16 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.22 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -5.3A VGS = -10V 1.4 ID = -2.65A A 0.16 1.2 1 TA = 125oC 0.1 TA = 25oC 0.8 0.6 -50 0 50 100 o 0.04 150 0 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 10 VDS = -5V Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 1 0.1 0.01 0.001 0.0001 TA = 125oC 25oC -55oC -ID, DRAIN CURRENT (A) 8 6 4 125oC 2 25oC TA = -55oC 0 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDFS2P103A Rev C (W) FDFS2P103A Typical Characteristics 800 10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -5.3A 8 VDS = -10V -15V CAPACITANCE (pF) 600 f = 1MHz VGS = 0 V -20V 6 Ciss 400 4 200 Coss 2 Crss 0 0 0 2 4 6 8 Qg, GATE CHARGE (nC) 10 12 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 10 IF, FORWARD LEAKAGE CURRENT (A) IR, REVERSE LEAKAGE CURRENT (A) Figure 8. Capacitance Characteristics. 1 0.1 0.01 0.001 TJ = 25oC 0.0001 TJ = 125oC 1 TJ = 125oC 0.1 TJ = 25oC 0.01 0.00001 0.001 0 0.1 0.2 0.3 0.4 VF, FORWARD VOLTAGE (V) 0.000001 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (V) Figure 9. Schottky Diode Forward Voltage. Figure 10. Schottky Diode Reverse Current. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJA(t) = r(t) + RJA RJA = 135 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDFS2P103A Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I1 |
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